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SEMICONDUCTOR
TECHNICAL DATA
2 INPUT NOR GATE FEATURES
High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Power down protection is provided on all inputs and outputs.
1
KIC7WZ02FK
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
B C
8
DIM A B
E
C D E F G H
DD
A
MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1
0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1
D
4
5
MARKING
F
H
G
Type Name
Z02
Lot No.
US8
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s)
)
SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~7 -0.5~7 -0.5~7 -50 -50 50 100 200 -55 150 -55 150 UNIT V V V mA mA mA mA mW
PIN CONNECTION(TOP VIEW)
1A 1 1B 2 2Y 3 GND 4 8 V CC 7 1Y 6 2B 5 2A
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KIC7WZ02FK
Truth Table
A L L H H B L H L H Y H L L L
IN A IN B
Logic Diagram
1
OUT Y
Recommended Operating Conditions
CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature SYMBOL VCC VIN VOUT Topr RATING 1.65~5.5 V 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 0~20 (VCC=1.8V Input Rise and Fall Time dt/dv 0.15V, 2.5V 0.2V) ns/V (Note2) (Note3) V (Note1) V UNIT
0~10 (VCC=3.3V 0.3V) 0~5 (VCC=5.5V 0.5V)
Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state
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KIC7WZ02FK
ELECTRICAL CHARACTERISTICS DC Characteristics
TEST CONDITION CHARACTERISTIC SYMBOL VCC(V) High Level Input Voltage Low Level VIL VIH 1.65~1.95 MIN. 0.75 VCC Ta=25 TYP. 1.65 2.3 3.0 4.5 1.52 2.15 2.8 2.68 4.2 0 0 0 0 0.08 0.1 0.15 0.22 0.22 MAX. 0.25 VCC 0.3 VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 0.1 1 1 Ta=-40~85 MIN. 0.75 VCC 0.7 VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 MAX. 0.25 VCC 0.3 VCC 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 10 10 10 A A A V V V UNIT
2.3~5.5 0.7 VCC 1.65~1.95 2.3~5.5 1.65 IOH=-100 A 2.3 3.0 4.5 High Level VOH VIN= VIL IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA 1.65 2.3 3.0 3.0 4.5 1.8 IOH=100 A 2.3 3.0 4.5 Low Level VOL VIN=VIH IOH=4mA IOH=8mA IOH=16mA IOH=24mA IOH=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 -
Output Voltage
IOH=-32mA
Input Leakage Current Power Off Leakage Current Quiescent Supply Current
IIN IOFF ICC
VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
TEST CONDITION CHARACTERISTIC SYMBOL VCC(V) 1.8 tPLH tPHL CL=15pF, RL=1M 0.15 2.5 0.2 3.3 0.3 5.0 0.5 CL=50pF, RL=500 Input Capacitance Power Dissipation Capacitance CIN CPD (Note) 3.3 0.3 5.0 0.5 0 3.3 5.5 MIN. 2.0 1.2 0.8 0.5 1.2 0.8 Ta=25 TYP. 5.4 3.3 2.5 2.0 3.1 2.4 2.5 13.5 17.5 MAX. 9.8 5.4 3.8 3.0 4.6 3.7 Ta=-40~85 MIN. 2.0 1.2 0.8 0.5 1.2 0.8 MAX. 10 5.8 4.1 3.3 5.0 4.0 ns pF pF ns UNIT
Propagation delay time
Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+(ICCstatic)
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KIC7WZ02FK
AC Loading and Waveforms
VCC VCC A INPUT CL RL OUTPUT INPUT
CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns
Input=AC Waveform ; t r =tf =1.8ns PRR=10MHz ; Duty Cycle=50%
FIGURE 1. AC Test Circuit
FIGURE 2. ICCD Test Circuit
t r =3ns
t f =3ns 90% 50% 10% tw VCC
INPUT
GND
t PHL
t PLH VOH
OUTPUT
50%
50% VOL
FIGURE 3. AC Waveforms
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